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Study the Properties of Solution Processable CZTS Thin Films Induced by Annealing Treatment: Study of Annealing Time
Semiconductors ( IF 0.7 ) Pub Date : 2020-09-08 , DOI: 10.1134/s1063782620090110
R. A. Gani Shaikh , S. A. More , G. G. Bisen , S. S. Ghosh

Abstract

Cu2ZnSnS4 is suitable for high-performance thin-film solar cell because of its high absorbance coefficient, presence of non-toxic elements, excellent optoelectronic properties, and a near-perfect direct band gap. The effect of thermal annealing time (1–4 h) on the optical, morphological, and structural properties of Cu2ZnSnS4 coated through a simple solution processable method has been studied in the present work. All the CZTS films are crystalline in nature with kesterite structure as shown by X-ray diffraction studies. Crystallite size, strain, and dislocation density were calculated. However, no notable changes in these parameters were obtained by varying the annealing time in the above range. Field emission scanning electron microscopy images show good quality compact films with particle size in the order of 10–15 nm. Absorption spectroscopy results show an optical band gap of 1.46 eV. Raman spectroscopy was used to check binary or ternary phases present. It shows that the impurity phase decreases and the pure Cu2ZnSnS4 phase was obtained by increasing the annealing time to 3 and 4 h.



中文翻译:

退火处理可固溶CZTS薄膜的性能研究:退火时间

摘要

Cu 2 ZnSnS 4的吸收系数高,无毒元素的存在,优异的光电性能以及接近完美的直接带隙,因此适用于高性能薄膜太阳能电池。热退火时间(1-4小时)对Cu 2 ZnSnS 4的光学,形态和结构性能的影响在本工作中已经研究了通过简单的溶液可加工方法涂覆的涂层。X射线衍射研究表明,所有的CZTS膜本质上都是晶体,具有钾钛矿结构。计算出微晶尺寸,应变和位错密度。但是,通过在上述范围内改变退火时间,这些参数没有显着变化。场发射扫描电子显微镜图像显示了高质量的致密薄膜,其粒径约为10–15 nm。吸收光谱结果显示1.46 eV的光学带隙。拉曼光谱法用于检查存在的二元或三元相。结果表明,通过增加退火时间至3和4 h ,杂质相减少,获得纯Cu 2 ZnSnS 4相。

更新日期:2020-09-08
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