Abstract

The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.

中文翻译：

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栅极长度约为100 nm的场效应晶体管中漏极-栅极I-V特性的非线性补偿

摘要

分析了经典肖特基晶体管和基于AlGaAs / InGaAs / GaAs和InGaAs / GaAs化合物的二维电子气场效应晶体管中栅极-漏极电流-电压特性的非线性。针对研究中的结构的各种掺杂分布，分析了晶体管沟道中的载流子速度超调效应。