g-C₃N₄/BiVO₄, binary component heterojunction materials, were successfully synthesized for novel photocatalytic tetracycline (TC) decomposition. In the prepared binary component heterojunction, BiVO₄ was well distributed on g-C₃N₄ layer. In addition, BiVO₄ and g-C₃N₄ was intimately contacted. Both BiVO₄ and g-C₃N₄, which band gap energies were approximately 2.46 and 2.71 eV, respectively, would also absorb significant amount of visible light to excite electrons (e⁻) from their valence bands to conduction bands. Thus, the e⁻ on the conduction band of the BiVO₄ could quickly transfer and combine with the h⁺ on the valence band of the g-C₃N₄. Therefore, the g-C₃N₄/BiVO₄ could be easily excited by incident visible irradiation to produce large number of h⁺ on the valence band of the BiVO₄ and e⁻ on the conduction band of the g-C₃N₄. These produced e⁻ and h⁺ were strong enough for reactions with water and oxygen to product huge amounts of hydroxyl radicals for novel TC degradation. The photocatalytic performance of these g-C₃N₄/BiVO₄ materials highly depended on weight ratio of these used precursors. The g-C₃N₄/BiVO₄-10 material, which the g-C₃N₄:BiVO₄ weight ratio was 10%, presented the highest tetracycline degradation efficiency (95%). This was due to these excess of g-C₃N₄ covered more BiVO₄ surface preventing incident light reaching to the material and also represented as active sites for recombination of charges (e⁻ and h⁺) decreasing photocatalytic efficiency of the system. Finally, the synthesized g-C₃N₄/BiVO₄ presented novel durability during long-term photocatalysis.

gC ₃ N ₄ / BiVO ₄，二元组分异质结材料，已成功合成用于新型光催化四环素（TC）分解。在制备的二元组分异质结中，BiVO ₄均匀分布在gC ₃ N ₄层上。另外，BiVO ₄和gC ₃ N ₄紧密接触。既BiVO ₄和GC ₃ Ñ ₄，其带隙能量分别约为2.46和2.71电子伏特，分别也将吸收可见光的显著量以激发电子（e ^-）从它们的价带到导带。因此，电子^-对BiVO的传导带₄可以快速传输和与H结合⁺上的GC价带₃ Ñ ₄。因此，GC ₃ Ñ ₄ / BiVO ₄可以很容易地通过入射可见光照射而激发，以产生大量为h ⁺对BiVO的价带₄和e ^-上的GC导带₃ Ñ ₄。这些生产ë ^-和h ⁺具有足够的强度，足以与水和氧气发生反应，从而产生大量的羟基自由基，从而使新型TC降解。这些gC ₃ N ₄ / BiVO ₄材料的光催化性能高度依赖于这些使用的前体的重量比。gC ₃ N ₄：BiVO _4的重量比为10％的gC ₃ N ₄ / BiVO ₄ -10材料具有最高的四环素降解效率（95％）。这是由于这些过量的gC ₃ N ₄覆盖了更多的BiVO ₄表面防止入射光到达该材料，并且还表示为用于电荷（例如重组活性位点^-和h ⁺）系统的降低的光催化效率。最后，合成的gC ₃ N ₄ / BiVO ₄在长期光催化过程中表现出新颖的耐久性。