Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS₂ nanoribbons on β-gallium (iii) oxide (β-Ga₂O₃) (100) substrates. LDE MoS₂ nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS₂-nanoribbon-based field-effect transistors exhibit high on/off ratios of 10⁸ and an averaged room temperature electron mobility of 65 cm² V⁻¹ s⁻¹. The MoS₂ nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga₂O₃ can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe₂ nanoribbons and lateral heterostructures made of p-WSe₂ and n-MoS₂ nanoribbons for futuristic electronics applications.

二维过渡金属二硫化碳纳米带被吹捧为高级逻辑和存储设备的未来极端设备缩减规模，但仍然是一个巨大的合成挑战。这里，我们证明连续的，自对准的，单层膜和单晶的MoS的密集阵列的一个凸缘定向外延（LDE）_2个纳米带对β-镓（III）氧化物（的β-Ga ₂ ö ₃）（100）衬底。LDE MoS ₂纳米带具有长距离的空间均匀性，并且具有与剥落基准中看到的相当的传输特性。基于MoS ₂纳米核的原型场效应晶体管的开/关比很高，为10 ⁸平均室温电子迁移率为65 cm ²  V ^-1  s ^-1。所述MOS ₂纳米带可以很容易地转移到任意的基材，而下层的β-Ga ₂ ö ₃可以机械剥离后可重复使用。我们进一步证明LDE是通用的外延平台，用于生长p型WSe ₂纳米带和由p-WSe ₂和n-MoS ₂纳米带制成的横向异质结构，用于未来电子应用。