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Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2020-09-07 , DOI: 10.1002/pssr.202070036
Surya Abhishek Singaraju 1 , Gabriel Cadilha Marques 1, 2 , Patric Gruber 3 , Robert Kruk 1 , Horst Hahn 1, 4 , Ben Breitung 1, 5 , Jasmin Aghassi-Hagmann 1, 6
Affiliation  

The cover image (referring to article number 2000252 by Surya Abhishek Singaraju, Jasmin Aghassi‐Hagmann, and co‐workers) depicts fully printed inverters in a transistor‐resistor logic on flexible polyimide substrates. Polycrystalline indium oxide is printed as the active semiconducting material whereas graphene is printed as the passive structures. The authors observed the devices to be highly stable in electrical performance while withstanding tensile strain of more than 2%. A polymer electrolyte is used as gate insulator and PEDOT:PSS as top gate. The devices are even subjected to stretching in order to substantiate the surface corrugation of the printed films.
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中文翻译:

在柔性基板上使用金属氧化物半导体和石墨烯无源器件的全印刷反相器

封面图像(参考Surya Abhishek Singaraju,Jasmin Aghassi-Hagmann和同事的文章编号2000252)描绘了柔性聚酰亚胺基板上晶体管电阻逻辑中的全印刷反相器。多晶氧化铟被印刷为活性半导体材料,而石墨烯被印刷为无源结构。作者观察到这些器件在电气性能方面非常稳定,同时承受的拉应变超过2%。高分子电解质用作栅极绝缘体,PEDOT:PSS用作顶部栅极。装置甚至经受拉伸以证实印刷膜的表面波纹。
图片
更新日期:2020-09-08
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