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Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020)
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2020-09-07 , DOI: 10.1002/aelm.202070039
Xuanyu Shan , Zhongqiang Wang , Ya Lin , Tao Zeng , Xiaoning Zhao , Haiyang Xu , Yichun Liu

In article number 2000536 by Zhongqiang Wang, Haiyang Xu, Yichun Liu, and co‐workers, activation of silent synapse to functional synapse is demonstrated by plasma‐treatment in TiO2‐nanowire based memristor. The pristine device acts as the silent synapse without synaptic plasticity and the plasmatreated device mimicked functional synapse, which is beneficial for expanding the plasticity of artificial synapse.
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中文翻译:

沉默突触:基于TiO2纳米线的忆阻器中的等离子体诱导的氧空位使沉默突触激活(Adv。Electron。Mater。9/2020)

在王忠强,徐海阳,刘宜春和他的同事们的文章编号2000536中,通过在基于TiO2纳米线的忆阻器中进行等离子体处理,证明了沉默突触向功能性突触的激活。原始装置充当无突触可塑性的沉默突触,而等离子体处理的装置模仿功能性突触,这有利于扩大人工突触的可塑性。
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更新日期:2020-09-08
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