A comparison between experiment and numerical simulation of microwave heating of a parallelepipedic silicon carbide (SiC) sample is presented. Using a‐2.45 GHz single‐mode cavity, the evolution of the surface temperature is first experimentally studied for different orientations of the sample. A finite element analysis of this electromagnetic‐thermal coupled problem is then conducted with the COMSOL Multiphysics^® software. Despite the different approximations of our model, a good agreement between experimental and numerical results is found, confirming that the heating of SiC depends only on the electric field. The effect of sample orientations and the cavity length on heating is also highlighted and analyzed.

中文翻译：

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微波直接加热碳化硅的实验和数值热分析

提出了对平行六面体碳化硅（SiC）样品进行微波加热的实验与数值模拟之间的比较。使用2.45 GHz单模腔，首先通过实验研究了样品不同方向的表面温度变化。此电磁耦合热问题的有限元分析，然后与COMSOL Multiphysics软件进行^®软件。尽管我们的模型近似值不同，但实验结果和数值结果之间找到了很好的一致性，这证实了SiC的加热仅取决于电场。还强调并分析了样品取向和腔体长度对加热的影响。