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The microstructure and thermoelectric properties of the Mg2(Sn,Si,Bi) films containing excess metal Mg phase
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.tsf.2020.138322
Gui-hong Song , Gui-peng Li , Xiu-yu Li , Hao Du , Fang Hu , Lisong Yin

Abstract To avoid the uncontrollable Mg content in deposited films caused by the easy evaporation of Mg in alloy target, the Mg2(Sn,Si,Bi) solid solutions films with a tiny of excess Mg metal phase were prepared using a Mg-Sn-Si-Bi alloy target and a high pure Mg target by magnetron sputtering alternately. The phase components, microstructures as well as the thermoelectric properties were systematically investigated. The excess metal Mg phase with a few micron size uniformly distributes in the Mg2(Sn,Si,Bi) solid solution films and the size of the excess metal Mg phase becomes bigger and bigger and the phase gradually convert a narrow strip shape as Mg target sputtering time increase from 40 to 60 s. It is beneficial to an increase in both Seebeck coefficient and electrical conductivity that a tiny excess metal Mg phase exists in Mg2(Sn,Si) based films. The Mg2(Sn,Si) based films containing tiny excess metal Mg phase with an appropriate size posses the highest absolute value of Seebeck coefficient and appropriate electrical conductivity, resulting in the maximum power factor.

中文翻译:

含过量金属Mg相的Mg2(Sn,Si,Bi)薄膜的微观结构和热电性能

摘要 为避免合金靶材中Mg容易蒸发导致沉积膜中Mg含量不可控,采用Mg-Sn-Si制备了含有少量过量Mg金属相的Mg2(Sn,Si,Bi)固溶体薄膜。 -Bi合金靶材和高纯Mg靶材通过磁控溅射交替进行。系统地研究了相组分、微观结构以及热电性能。几微米尺寸的多余金属Mg相均匀分布在Mg2(Sn,Si,Bi)固溶体薄膜中,多余金属Mg相的尺寸越来越大,逐渐转变为窄条状,作为Mg靶材溅射时间从 40 秒增加到 60 秒。Mg2(Sn, Si) 基薄膜。Mg2(Sn,Si)基薄膜含有微小过量金属Mg相,尺寸适当,具有最高的塞贝克系数绝对值和适当的电导率,从而产生最大的功率因数。
更新日期:2020-11-01
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