Abstract Cu(In,Ga)Se2 (CIGS) is suitable absorber material for thin film photovoltaic owing to its excellent thermo-chemical stability and demonstration of high power conversion efficiency of 23.35% for lab-scale devices. The manufacturing of CIGS thin film solar cells need to be economical for commercially viability. Non-vacuum approach for the synthesis of the CIGS thin film absorber is desired for its cost-effective benefits over vacuum based processes. We report development of solution-processed CIGS absorber layer involving spraying of sonochemically prepared nanocrystal ink to obtain pristine CIGS nanocrystal layer, followed by single-step atmospheric pressure selenization utilizing Se pallets as a Se vapor source. Influence of selenization conditions and NaF doping on grain growth of the CIGS thin film absorber is studied in detail by structural, morphological, compositional and electrical characterization. Solar cells prepared under optimized conditions yielded a maximum efficiency of 6.7% without employing any thermal pre-treatment and toxic Potassium Cyanide etching.

中文翻译：

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Cu(In,Ga)Se2薄膜太阳能电池通过喷铸纳米晶层的大气硒化生产

摘要 Cu(In,Ga)Se2 (CIGS)由于其优异的热化学稳定性和实验室规模器件的23.35%的高功率转换效率而成为适用于薄膜光伏的吸收材料。CIGS 薄膜太阳能电池的制造需要经济实惠才能实现商业可行性。用于合成 CIGS 薄膜吸收器的非真空方法因其相对于基于真空的工艺的成本效益优势而受到青睐。我们报告了溶液处理的 CIGS 吸收层的开发，涉及喷涂声化学制备的纳米晶体墨水以获得原始 CIGS 纳米晶体层，然后利用 Se 托盘作为 Se 蒸气源进行单步常压硒化。通过结构、形态、成分和电学表征，详细研究了硒化条件和 NaF 掺杂对 CIGS 薄膜吸收体晶粒生长的影响。在优化条件下制备的太阳能电池在不采用任何热预处理和有毒氰化钾蚀刻的情况下产生了 6.7% 的最大效率。