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Effect of ultraviolet radiation exposure on optical nonlinearity and switching traits of SnO2 thin films deposited by thermal evaporation
Optics & Laser Technology ( IF 5 ) Pub Date : 2020-09-06 , DOI: 10.1016/j.optlastec.2020.106575
Sandeep Yadav , Sonia Kumari , S.K. Ghoshal , Raj Kumar , S.K. Chaudhary , Devendra Mohan

Highly transparent amorphous SnO2 thin films were deposited using the thermal evaporation method and characterized. The influence of the UV radiation exposure (for approximately 2 h) on the morphology, linear and nonlinear optical properties of the films was evaluated for the first time. The optical switching performance of the as-deposited thin films was examined using the pump–probe technique. A continuous wave (CW) diode-pumped solid-state laser (532 nm with maximum power of 100 mW) and He-Ne laser (633 nm with maximum power of 35 mW) was used for the pump and probe beam, respectively. The band gap energies of the films were calculated using the Mott and Davis model fitting procedure. The films transmittance was increased and band gap was decreased upon the UV exposure. The signal modulations in the films were observed with the increase in the pump power. The signal intensities of both as-deposited and UV radiation exposed films were correspondingly dropped from 7.58 to 7.47 mW and from 8.16 to 8.05 mW, when the pump power was raised beyond 20 mW. The achieved SnO2 films displayed unaltered dynamic range under the UV radiation exposure. In addition, the nonlinear absorption coefficients of the UV radiation exposed films were increased from 0.10139 to 0.36435 cm W−1. This indicated the stabilization of the films upon the UV exposure and subsequent removal of the excess oxygen. The higher value of the nonlinear absorption by the films satisfied their figure of merit. The proposed SnO2 thin films may be effective for the development of the nonlinear optical devices working in the UV region.



中文翻译:

紫外线辐射对热蒸发沉积SnO 2薄膜光学非线性和开关特性的影响

高度透明的无定形SnO 2使用热蒸发法沉积薄膜并进行表征。首次评估了紫外线辐射(约2小时)对薄膜的形貌,线性和非线性光学性能的影响。使用泵浦探针技术检查了沉积薄膜的光学开关性能。泵浦和探测光束分别使用了连续波(CW)二极管泵浦固态激光器(532 nm,最大功率为100 mW)和He-Ne激光器(633 nm,最大功率为35 mW)。使用Mott和Davis模型拟合程序计算薄膜的带隙能。暴露于紫外线后,膜的透射率增加,带隙减小。随着泵浦功率的增加,观察到了薄膜中的信号调制。当泵浦功率提高到20 mW以上时,沉积后的薄膜和暴露于UV辐射的薄膜的信号强度相应地从7.58降低到7.47 mW,从8.16降低到8.05 mW。达到的SnO在紫外线照射下,有2部影片的动态范围保持不变。另外,暴露于UV辐射的膜的非线性吸收系数从0.10139增加到0.36435cm W -1。这表明在紫外线照射下膜的稳定化,随后去除了多余的氧气。膜的较高非线性吸收值满足其品质因数。所提出的SnO 2薄膜对于在紫外区域工作的非线性光学器件的开发可能是有效的。

更新日期:2020-09-06
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