Tungsten (W) films prepared by radio frequency (RF) magnetron sputtering at 1 Pa, 3 Pa, and 5 Pa were irradiated by low-energy (50 eV, 300 eV, and 600 eV) deuterium ions at room temperature (RT), 573 K and 873 K, with fluences ranging from 3.2 × 10²²/m² to 9.0 × 10²²/m². Exfoliation was observed in the W film deposited at 1 Pa after irradiation of RT, 3.2 × 10²²/m², 300 eV D⁺. W films prepared at 5 Pa suffered the irradiation of different fluences, energies, and temperatures without degradation. SEM showed granules appearing and a rougher surface after irradiation. Irradiation energy, fluence and temperature played critical roles in D retention of tungsten. ERD showed D retention initiated and increased with increasing energies from 50 eV to 600 eV and with increasing fluences from 3.2 × 10²²/m² to 9.0 × 10²²/m², whereas nearly no D retention occurred in the W film irradiated at 873 K.

在室温（RT）下，通过低能（50 eV，300 eV和600 eV）氘离子辐照通过射频（RF）磁控溅射在1 Pa，3 Pa和5 Pa下制备的钨（W）膜， 573 K和873 K，通量范围为3.2×10 ²² / m ²到9.0×10 ²² / m ²。剥离是在RT的照射之后沉积在1Pa W膜观察到的，3.2×10 ²² /米²，300电子伏特d ⁺。在5 Pa下制备的W膜经受了不同注量，能量和温度的辐射而没有降解。SEM显示出辐射后出现颗粒并且表面更粗糙。辐照能量，能量密度和温度在钨的D保留中起关键作用。ERD显示，随着能量从50 eV增加到600 eV，能量密度从3.2×10 ²² / m ²增加到9.0×10 ²² / m ²，D保留开始并增加，而在873辐照的W膜中几乎没有D保留发生。 K.