Films of n-GaAs 1-x Bi x films were grown via molecular beam epitaxy using both Si and Te as dopant sources. Electron mobility was characterized by Hall effect measurements as a function of carrier concentration and Bi content for films with bismuth fractions of x = 0.02 and x = 0.06. While GaAsBi:Te shows lower majority carrier mobility than GaAsBi:Si at low Bi concentrations, the two become comparable as Bi content increases. Furthermore, it was observed that in the presence of bi-metallic Bi-Ga droplets on the film surface, films doped with Si display p-type behavior, likely due to Si preferentially occupying group-V sites. The use of Te as a dopant always resulted in n-type epilayers, making it a more reliable dopant choice for high Bi content films. Finally, ex situ annealing was studied as a method to improve majority carrier mobility in GaAs 0.98 Bi 0.02 :Te films, with a 10 min anneal at 350 °C resulting in a 30% improvement in...

中文翻译：

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碲和硅作为GaAsBi的n型掺杂剂的表征

使用Si和Te作为掺杂源，通过分子束外延生长n-GaAs 1-x Bi x膜。电子迁移率通过霍尔效应测量表征，其为铋含量为x = 0.02和x = 0.06的薄膜的载流子浓度和Bi含量的函数。尽管在低Bi浓度下，GaAsBi：Te的多数载流子迁移率比GaAsBi：Si低，但随着Bi含量的增加，两者的可比性变得可比。此外，观察到在膜表面上存在双金属Bi-Ga液滴时，掺杂有Si的膜表现出p型行为，这可能是由于Si优先占据了V族位。使用Te作为掺杂剂总是会产生n型外延层，使其成为高Bi含量薄膜的更可靠的掺杂剂选择。最后，