In this paper, The Vertical Power MOSFET with Partial GaN/Si Heterojunction is proposed, and the Partial GaN/Si Heterojunction double-diffused MOSFET（Partial GaN/Si VDMOS）and U-shaped MOSFET（Partial GaN/Si UMOS）are simulated. Thanks to the breakdown point transfer technology（BPT）, the breakdown point is transferred from the high electric field area to the low electric field area, therefore, the breakdown voltage(BV) is improved. Different types of dangling bonds are introduced to simulate the influence of different interface state densities on the forward characteristics of the device, the proposed structure alleviates the influence of interface state occurred in the whole GaN/Si heterojunction VDMOS and UMOS(GaN/Si VDMOS and GaN/Si UMOS). The results show that the BV and the specific on-resistance(Ron,sp) of Partial GaN/Si VDMOS are 325V and 10.17mΩcm2, of Partial GaN/Si UMOS are 279V and 2.34mΩcm2, all of which break the limit relation of silicon.

中文翻译：

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具有部分 GaN/Si 异质结的新型垂直功率 MOSFET 通过击穿点转移 (BPT) 端子技术提高击穿电压

本文提出了具有部分GaN/Si异质结的垂直功率MOSFET，并对部分GaN/Si异质结双扩散MOSFET（部分GaN/Si VDMOS）和U型MOSFET（部分GaN/Si UMOS）进行了仿真。由于采用了击穿点转移技术（BPT），击穿点从高电场区转移到了低电场区，从而提高了击穿电压（BV）。引入不同类型的悬空键来模拟不同界面态密度对器件正向特性的影响，所提出的结构减轻了整个GaN/Si异质结VDMOS和UMOS（GaN/Si VDMOS和GaN/Si UMOS）。结果表明，Partial GaN/Si VDMOS的BV和比导通电阻(Ron,sp)分别为325V和10。