AlInN/GaN power diodes consisting of a p-type GaN and a 300 nm thick n-type AlInN drift layer are demonstrated. The p–n junction is grown using metalorganic chemical vapor deposition, and the Al x In 1− x N drift layer is lattice-matched to GaN ( x ∼ 0.82) with an electron concentration of ∼8 × 10 16 cm −3 after correcting for the 2-dimensional electron gas. The diodes exhibit ∼−60 V blocking capability. Under forward bias, the diode has a turn-on voltage of ∼4 V. If experimental challenges are overcome, the ultrawide bandgap and high mobility of an AlInN drift layer could increase the performance of GaN-based power devices.

中文翻译：

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电力电子设备用AlInN / GaN二极管

说明了由p型GaN和300 nm厚的n型AlInN漂移层组成的AlInN / GaN功率二极管。使用有机金属化学气相沉积法生长p–n结，经过校正后，Al x In 1-x N漂移层与GaN（x〜0.82）晶格匹配，电子浓度为〜8×10 16 cm -3。用于二维电子气。二极管具有〜-60 V的阻断能力。在正向偏置下，该二极管的导通电压约为4V。如果克服了实验挑战，AlInN漂移层的超宽带隙和高迁移率可以提高GaN基功率器件的性能。