Edge traps in the gate oxide of silicon nanowire MOSFETs have been extracted from tunnel current noise measurement in a gated diode like arrangement. We have found that, low frequency noise in tunnel current results from collective response of the edge traps available within the gate oxide surrounding band-to-band generation (BTBG) region of silicon nanowire, and when the BTBG region is accessed by favorable terminal biases. From detail modeling of the phenomenon, we derived a closed form expression of the tunneling current noise power spectral density (PSD) employing which oxide edge trap density in nanowire MOSFET had been extracted through its fit with the experimental noise PSD data. We furthermore validated our model for different BTBG biases, and contrasted our result with the bulk oxide trap density in identical MOSFET, while the latter was separately estimated from the gate current noise PSD measurement. Mismatch between the oxide bulk trap and edge trap concentrations has been found, whereby actual edge trap density remains otherwise hidden from the widely employed gate current noise measurement technique. It is because, the present scheme improves the resolution of the extracted oxide edge trap concentration in surrounded gate MOSFET owing to constricted tunnel current flow near the corner of the gate which imposes selectivity on the oxide edge traps

中文翻译：

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硅纳米线 MOSFET 中的氧化物边缘陷阱密度从门控二极管类排列中的隧道电流噪声测量中提取

硅纳米线 MOSFET 的栅极氧化物中的边缘陷阱已从类似门控二极管的布置中的隧道电流噪声测量中提取出来。我们发现，隧道电流中的低频噪声是由硅纳米线的栅氧化层周围的带间带生成 (BTBG) 区域内可用的边缘陷阱的集体响应引起的，并且当 BTBG 区域被有利的终端偏置访问时. 从该现象的详细建模中，我们推导出了隧道电流噪声功率谱密度 (PSD) 的封闭形式表达式，其中纳米线 MOSFET 中的氧化物边缘陷阱密度已通过其与实验噪声 PSD 数据的拟合提取。我们还针对不同的 BTBG 偏置验证了我们的模型，并将我们的结果与相同 MOSFET 中的体氧化物陷阱密度进行了对比，而后者是从栅极电流噪声 PSD 测量中单独估计出来的。已经发现氧化物体陷阱和边缘陷阱浓度之间的不匹配，因此实际边缘陷阱密度仍然隐藏在广泛采用的栅极电流噪声测量技术之外。这是因为，本方案提高了包围栅极 MOSFET 中提取的氧化物边缘陷阱浓度的分辨率，因为在栅极拐角附近的隧道电流受到限制，这对氧化物边缘陷阱施加了选择性