The Junctionless Accumulation Mode Double Gate MOSFET (JAM DG MOSFET) is a promising novel architecture for future nano-scaled devices because of its outstanding electrical characteristics, e.g., lower subthreshold swing, lower drain induced barrier lowering, i.e., lower short channel effects and higher $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ratio. In this paper, a comprehensive analysis of the effects of single-event transient on JAM DG MOSFET has been performed using the sentaurus TCAD simulator. The result shows that the transient drain current peak obtained after the heavy-ion strike for JAM DG MOSFET is small at lower value linear energy transfer (LET) and high for the larger value of LET. Collected charge at different LET values has also been investigated. Moreover, the sensitive region of the device, e.g., source to channel junction, channel, and channel to drain junction has been studied. It has been found that the drain to channel junction is more sensitive to the linear energy than the channel and source to channel junction. The electrical characteristics have also been compared with JL DG MOSFET.

中文翻译：

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无结累积模式 MOSFET 中单事件瞬态效应的研究

无结累积模式双栅极 MOSFET (JAM DG MOSFET) 是一种用于未来纳米级器件的有前途的新型架构，因为它具有出色的电气特性，例如较低的亚阈值摆幅、较低的漏极感应势垒降低，即较低的短沟道效应和较高的$\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ 比率。在本文中，使用 sentaurus TCAD 模拟器对单事件瞬态对 JAM DG MOSFET 的影响进行了综合分析。结果表明，JAM DG MOSFET 在重离子撞击后获得的瞬态漏极电流峰值在线性能量转移 (LET) 值较低时较小，而在 LET 值较大时较高。还研究了在不同 LET 值下收集的电荷。此外，设备的敏感区域，例如，源到沟道结、沟道和沟道到漏结已经被研究过。已经发现，漏极到沟道的结比沟道和源极到沟道的结对线性能量更敏感。电气特性还与 JL DG MOSFET 进行了比较。