The structural and electrical property changes of two types of copper oxides (CuO and Cu2O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu4O3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu2O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

中文翻译：

---

铜氧化物中导电丝形成的原位透射电子显微镜研究

用原位透射电子显微镜 (TEM) 研究了偏压下两种氧化铜 (CuO 和 Cu2O) 的结构和电性能变化。不同材料的相通过电子衍射确认。在这两种类型的氧化物中，都观察到了动态导电路径的形成和溶解。发现CuO薄膜电阻的降低伴随着电场强度最高的Cu4O3相的形成。我们还发现，Cu2O 膜电阻率的降低更为广泛，并且发生在取决于电流柔量水平的区域。讨论了负责观察的物理机制及其对基于氧化铜的忆阻器中导电区域形成的影响。