Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU.

中文翻译：

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CMOS 兼容的硅光子传感器，用于使用局部背面释放的折射率感测

使用互补金属氧化物半导体 (CMOS) 制造方法，硅光子传感器是具有多功能应用和可扩展生产前景的芯片实验室解决方案的有希望的候选者。然而，由于传感区域与光学和电子元件相邻，使得封装和传感器处理具有挑战性，因此其广泛使用受到了阻碍。在这项工作中，采用了光子传感器的局部背面释放，使传感区域与芯片的其余部分分离。这种方法允许保持线路前端的光子集成电路和线路后端的金属互连的兼容性。该传感器基于微环谐振器，并使用 CMOS 技术在晶圆级制造。