Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay the foundation for the next-generation of high-speed non-volatile memory.

中文翻译：

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基于范德华异质结构的超快非易失性闪存

闪存已成为无处不在的固态存储设备，广泛应用于便携式数字设备、计算机和企业应用中。信息时代的发展对记忆速度和保留性能提出了更高的要求。在这里，我们展示了一种基于 MoS2/h-BN/多层石墨烯 (MLG) 范德华异质结构的超快非易失性存储器，它具有原子级平面界面并实现了超快的写入/擦除速度（~20 ns） ，超过了报道的最先进的闪存（~100 ns）。超快闪存可为下一代高速非易失性存储器奠定基础。