Self-assembled quantum dots (QDs) contribute versatile nonclassical light sources for implementing photonic quantum technologies. The recent success of integrating self-assembled QDs with various photonic architectures highlights their great suitability for efficient on-chip single-photon sources (SPSs). However, QDs suffer from large inhomogeneous broadening due to the random growth process, and their potential in practical integrated quantum photonic circuits can be harnessed only when precise tuning of the single-photon emission energy is achieved. Here we introduce a hybrid piezoelectric–semiconductor integration scheme to realize a GaAs quantum photonic chip (QPC) with energy-tunable QD-based SPSs. The hybrid chip is fabricated on a QD-containing GaAs nanomembrane that is transferred onto a single-crystal piezoelectric actuator. Deterministic single-photon emission from QDs is generated and routed along the highly confined GaAs waveguides. By varying the voltage applied to the piezoelectric actuator, optical properties of the QDs-based SPSs can be dynamically and reversibly manipulated by strain fields. Single-photon emission energy of QDs can be tuned in a broad range of 10.4 meV with a tuning rate of 6.4 pm·V^–1. The hybrid GaAs QPC with energy-tunable SPSs demonstrated here provides a feasible way toward the development of complex integrated quantum photonic circuits with improved scalability and functionality.

中文翻译：

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GaAs波导的应变调谐基于能量可调量子点的单光子源的片上集成

自组装量子点（QD）为实现光子量子技术贡献了多种非经典光源。将自组装量子点与各种光子架构集成在一起的最新成功表明，它们非常适合高效的片上单光子源（SPS）。然而，量子点由于随机增长过程而遭受很大的不均匀展宽，并且只有在实现单光子发射能量的精确调节时才能利用它们在实际集成量子光子电路中的潜力。在这里，我们介绍一种混合的压电-半导体集成方案，以实现基于能量可调QD的SPS的GaAs量子光子芯片（QPC）。混合芯片是在包含QD的GaAs纳米膜上制造的，该膜被转移到单晶压电致动器上。产生来自QD的确定性单光子发射，并沿着高度受限的GaAs波导路由。通过改变施加到压电致动器的电压，可以基于应变场动态和可逆地控制基于QD的SPS的光学特性。量子点的单光子发射能量可以在10.4 meV的宽范围内进行调谐，调谐速率为6.4 pm·V。^–1。此处展示的具有能量可调SPS的混合GaAs QPC为开​​发具有改进的可扩展性和功能性的复杂集成量子光子电路提供了可行的方法。