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ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing.
Nanoscale Research Letters ( IF 5.418 ) Pub Date : 2020-09-04 , DOI: 10.1186/s11671-020-03405-x
Hsiang-Chun Wang 1, 2 , Yuehua Hong 1 , Zhangwei Chen 3 , Changshi Lao 3 , Youming Lu 1 , Zhichao Yang 4 , Youhua Zhu 5 , Xinke Liu 1
Affiliation  

To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain the advantages of inkjet printing technology, the inkjet printing Ag nanoparticles (NPs) were deposited on the inkjet printing ZnO UV photodetector for the first time. The inkjet printing Ag NPs can passivate the surface defects of ZnO and work as surface plasmons from the characterization of photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and finite difference time domain method (FDTD) simulation. The normalized detectivity (D*) of the Ag NP-modified detector reaches to 1.45 × 1010 Jones at 0.715 mW incident light power, which is higher than that of 5.72 × 109 Jones of the bare ZnO photodetector. The power-law relationship between the photocurrent and the incident light power of the Ag NP-modified ZnO detector is Ipc ∝ P2.34, which means the photocurrent is highly sensitive to the change of incident light power.



中文翻译:

Ag纳米粒子使用全喷墨印刷修饰的ZnO UV光电探测器。

为了进一步改善全喷墨印刷ZnO UV光电探测器的性能并保持喷墨印刷技术的优势,喷墨印刷Ag纳米颗粒(NPs)首次沉积在喷墨印刷ZnO UV光电探测器上。喷墨印刷Ag NPs可以钝化ZnO的表面缺陷,并可以通过光致发光(PL),X射线光电子能谱(XPS)和有限差分时域方法(FDTD)模拟来充当表面等离子体激元。Ag NP改性检测器的归一化灵敏度(D *)在0.715 mW入射光功率下达到1.45×10 10 Jones,高于5.72×10 9。裸露的ZnO光电探测器的Jones。Ag NP修饰的ZnO检测器的光电流与入射光功率之间的幂律关系为I pc  ∝  P 2.34,这意味着光电流对入射光功率的变化高度敏感。

更新日期:2020-09-05
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