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Facile Synthesis of Sulfur-Doped Mesoporous Carbon Nitride Supported Defect-Rich Cobalt Sulfide for Electrocatalytic Water Oxidation
Crystal Growth & Design ( IF 3.8 ) Pub Date : 2020-09-03 , DOI: 10.1021/acs.cgd.9b01703
Devesh Kumar Singh 1 , Vellaichamy Ganesan 1 , Dharmendra Kumar Yadav 1 , Mamta Yadav 1
Affiliation  

The synthesis of defect-rich materials is of significant interest for electrochemical energy conversion, including water splitting. Herein, we report a novel strategy for the synthesis of sulfur-doped mesoporous conducting carbon nitride supported defect-rich cobalt sulfide (O-Co3S4@S-MCN). Mesoporous silica material (MCM-41) is used as a template for the synthesis, and it performs dual functions: introducing porosity and providing in situ oxygen to fill the defects. O-Co3S4@S-MCN is highly crystalline and shows characteristic diffractions indicating the formation of defect-rich Co3S4. X-ray photoelectron spectroscopy proves the presence of Co–S (777.9 eV) and Co–O (782.4 eV) bonds in O-Co3S4@S-MCN. Further, Fourier-transform infrared spectroscopy clearly indicates the presence of C═N (1620 cm–1) and C═S (1090 cm–1) bonds. This composite material, O-Co3S4@S-MCN, shows a low onset potential (1.6 V for 10 mA cm–2), high mass activity (71 A/g at 1.7 V), high rate (Tafel slope, 52 mV/dec), and excellent stability (only 5% decrease in current density after 2 h continuous electrolysis) for the electrocatalytic oxygen evolution reaction in 1.0 M KOH.

中文翻译:

用于电催化水氧化的硫掺杂介孔氮化碳负载缺陷型钴硫化物的简便合成

富缺陷材料的合成对于电化学能量转换(包括水分解)具有重大意义。在这里,我们报告了一种新的策略,用于合成硫掺杂的介孔导电氮化碳负载的富缺陷钴硫化物(O-Co 3 S 4 @ S-MCN)。介孔二氧化硅材料(MCM-41)被用作合成的模板,它具有双重功能:引入孔隙率并提供原位氧气以填充缺陷。O-Co 3 S 4 @ S-MCN是高度结晶的,并且显示出特征衍射,表明形成了富缺陷的Co 3 S 4。X射线光电子能谱证明O-Co 3 S 4 @ S-MCN中存在Co–S(777.9 eV)和Co–O(782.4 eV)键。此外,傅立叶变换红外光谱清楚地表明存在C═N(1620 cm –1)和C═S(1090 cm –1)键。这种复合材料O-Co 3 S 4 @ S-MCN显示出低的起始电位(10 mA cm –2时为1.6 V ),高质量的活性(1.7 V下为71 A / g),高速率(Tafel斜率, 52 mV / dec)和优异的稳定性(连续电解2 h后电流密度仅降低5%),用于1.0 M KOH中的电催化氧放出反应。
更新日期:2020-09-03
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