Abstract A nanoscale investigation of three-dimensional (3-D) surface micromorphology of archetypical N, N0- bis (n-etyl) x:y, dicyanoperylene- 3, 4:9, 10 bis (dicarboximide) (PDI8-CN2) thin films on H-Si substrates, which are applicable in n-type semiconducting compounds, has been performed by using fractal analysis. In addition, surface texture characteristics of the PDI8-CN2 thin films have been characterized by using atomic force microscopy (AFM) operated in tapping-mode in the air. These analyses revealed that all samples can be described well as fractal structures at nanometer scale and their three dimensional surface texture could be implemented in both graphical models and computer simulations.

中文翻译：

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通过原子力显微镜分析 H-Si 上 PDI8-CN2 薄膜的表面微观形貌表征

摘要 原型 N, N0- 双 (n-乙基) x:y, dicyanoperylene-3, 4:9, 10 bis (dicarboximide) (PDI8-CN2) 薄膜的三维 (3-D) 表面微观形貌的纳米级研究H-Si 衬底上的薄膜适用于 n 型半导体化合物，已通过使用分形分析进行。此外，PDI8-CN2 薄膜的表面纹理特征已通过在空气中以轻敲模式操作的原子力显微镜 (AFM) 进行表征。这些分析表明，所有样品都可以很好地描述为纳米尺度的分形结构，并且它们的三维表面纹理可以在图形模型和计算机模拟中实现。