Abstract The family of III-nitride materials has provided a platform for tremendous advances in efficient solid-state lighting sources such as light-emitting diodes and laser diodes. In particular, quantum dot (QD) lasers using the InGaN/GaN material system promise numerous benefits to enhance photonic performance in the blue wavelength regime. Nevertheless, issues of strained growth and difficulties in producing InGaN QDs with uniform composition and size pose daunting challenges in achieving an efficient blue laser. Through a review of two previous studies on InGaN/GaN QD microdisk lasers, we seek to provide a different perspective and approach in better understanding the potential of QD emitters. The lasers studied in this paper contain gain material where QDs are sparsely distributed, comprise a wide distribution of sizes, and are intermixed with “fragmented” quantum well (fQW) material. Despite these circumstances, the use of microdisk cavities, where a few distinct, high-quality modes overlap the gain region, not only produces ultralow lasing thresholds (∼6.2 μJ/cm2) but also allows us to analyze the dynamic competition between QDs and fQWs in determining the final lasing wavelength. These insights can facilitate “modal” optimization of QD lasing and ultimately help to broaden the use of III-nitride QDs in devices.

中文翻译：

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超低阈值蓝色量子点激光器：成功的真正秘诀是什么？

摘要 III 族氮化物材料家族为高效固态光源（如发光二极管和激光二极管）的巨大进步提供了平台。特别是，使用 InGaN/GaN 材料系统的量子点 (QD) 激光器有望在增强蓝色波长范围内的光子性能方面具有诸多优势。然而，应变生长问题和生产具有均匀成分和尺寸的 InGaN QD 的困难对实现高效的蓝色激光器构成了艰巨的挑战。通过回顾之前关于 InGaN/GaN QD 微盘激光器的两项研究，我们寻求提供不同的视角和方法，以更好地了解 QD 发射器的潜力。本文中研究的激光器包含 QD 稀疏分布的增益材料，包括广泛的尺寸分布，并与“碎片化”量子阱 (fQW) 材料混合。尽管如此，使用微盘腔，其中一些不同的高质量模式与增益区域重叠，不仅产生超低激光阈值（~6.2 μJ/cm2），而且使我们能够分析 QD 和 fQW 之间的动态竞争确定最终的激光波长。这些见解可以促进 QD 激光的“模态”优化，并最终有助于扩大 III 族氮化物 QD 在设备中的使用。