Abstract In this paper, we report on the direct comparison of Al2O3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al2O3 layers with SiNx capping have very similar chemical composition, hydrogen concentration at the Al2O3/Si interface, and interface defect density (Dit), but the ALD film has slightly higher negative fixed charge (Qf) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of 23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J0e has negligible effect on cell efficiency. Thus, APCVD Al2O3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al2O3 passivated n-type Si solar cells.

中文翻译：

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等离子体辅助 ALD 和 APCVD 沉积的 Al2O3 与 SiNx 封盖的钝化性能比较

摘要 在本文中，我们报告了通过等离子体辅助原子层沉积 (ALD) 和常压化学气相沉积 (APCVD) 技术沉积的 Al2O3 薄膜对裸硅和硼扩散 Si 表面钝化性能的直接比较。发现 ALD 和 APCVD 沉积的 Al2O3 层与 SiNx 覆盖层具有非常相似的化学成分、Al2O3/Si 界面处的氢浓度和界面缺陷密度 (Dit)，但 ALD 膜具有略高的负固定电荷 (Qf)通常用于太阳能电池制造的高温 (~750 °C) 接触烧制循环。两种薄膜都显示出 23% 高性能太阳能电池设计的优异表面复合速度，具有非常低的体积和背面接触复合，观察到的 J0e 的微小差异对电池效率的影响可以忽略不计。因此，B 发射极的 APCVD Al2O3 钝化可以产生与其对应的 ALD Al2O3 钝化 n 型硅太阳能电池相当的效率。