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Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2020-09-02 , DOI: 10.1016/j.physb.2020.412499
Vildan Bilgin , Emrah Sarica , Barbaros Demirselcuk , Kadir Ertürk

In this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M. Structural investigations revealed that all films have hexagonal structure and mean crystallite size was found to be in the range of 18 nm–21 nm. On the other hand, CdS films exhibited 65–70% optical transmittance and band gap energy for all films was found to be about 2.42 eV. Electrical measurements of CdS/Si heterojunctions were carried out under both dark and illumination conditions. Calculated ideality factor and zero barrier height ranged from 3.02 to 2.66 and 0.74 eV–0.78 eV according to TE theory whereas they ranged from 6.91 to 4.73 and 0.71 eV–0.74 eV according to Cheungs’ method. Increase in reverse saturation current when heterojunctions were illuminated indicated that they have good sensitivity to solar light.



中文翻译:

超声喷雾热解法制备的CdS薄膜和CdS / Si异质结的表征及其对光的响应

在这项工作中,通过超声喷涂摩尔浓度为0.025 M至0.1 M的前驱体溶液,将CdS薄膜沉积在玻璃和p-Si基板上。结构研究表明,所有膜均具有六边形结构,并且发现平均晶粒尺寸为在18 nm–21 nm范围内。另一方面,CdS薄膜具有65-70%的透光率,所有薄膜的带隙能量约为2.42 eV。CdS / Si异质结的电学测量是在黑暗和光照条件下进行的。根据TE理论,理想因子和零势垒高度的计算范围为3.02至2.66和0.74 eV–0.78 eV,而根据Cheungs方法,其理想范围为6.91至4.73和0.71 eV–0.74 eV。

更新日期:2020-09-03
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