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Selenization of KF Premixed CuInGa Precursor and Its Impact on Solar Cell Performance
Electronic Materials Letters ( IF 2.4 ) Pub Date : 2020-09-02 , DOI: 10.1007/s13391-020-00244-x
Ji-A Oh , Yu-Jin Song , Sung-Wook Cho , Gyeong-A Lee , A-Hyun Kim , Chan-Wook Jeon

Abstract

K-doped Cu(In,Ga)Se2 absorber thin films were prepared by a two-step process (sputtering/selenization) using a metal precursor of a KF-premixed In/CuGa/Mo/glass structure and Se vapor. KF was deposited on top of In, between In and CuGa, and below CuGa by thermal evaporation. The properties were compared with those of a precursor without KF inserted. As an effect of KF insertion, a large electrical change was observed, i.e., the disappearance of deep-level defects, and the grain size and Ga composition distribution of the absorber layer thin film were changed slightly. Nevertheless, there was no benefit in terms of the solar cell performance compared to a precursor without KF inserted. The K inserted in the precursor occupied a position competitively with Na diffused from the substrate, resulting in an undesirable carrier density profile in the surface region of the absorber layer thin film.

Graphic Abstract



中文翻译:

KF预混合CuInGa前驱体的硒化及其对太阳能电池性能的影响

摘要

掺K的Cu(In,Ga)Se 2使用KF预混合的In / CuGa / Mo /玻璃结构的金属前体和Se蒸气,通过两步工艺(溅射/硒化)来制备吸收体薄膜。通过热蒸发将KF沉积在In的顶部,In和CuGa之间以及CuGa的下方。将该性能与未插入KF的前体的性能进行了比较。作为KF插入的效果,观察到较大的电变化,即深层缺陷的消失,并且吸收层薄膜的晶粒尺寸和Ga组成分布略有变化。然而,与没有插入KF的前体相比,在太阳能电池性能方面没有益处。插入前体中的K与从底物扩散的Na竞争性地占据了一个位置,

图形摘要

更新日期:2020-09-03
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