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Flux-to-voltage characteristic simulation of superconducting nanowire interference device
Chinese Physics B ( IF 1.7 ) Pub Date : 2020-08-31 , DOI: 10.1088/1674-1056/ab90f4
Xing-Yu Zhang 1, 2 , Yong-Liang Wang 1, 3 , Chao-Lin Lv 1, 3 , Li-Xing You 1, 2, 3 , Hao Li 1, 3 , Zhen Wang 1, 3 , Xiao-Ming Xie 1, 3
Affiliation  

Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current–voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.

中文翻译:

超导纳米线干扰器件的通量电压特性仿真

受近期在并联纳米线器件中的准Josephson效应发现的启发,我们在本研究中提出了一种超导纳米线干扰器件,该器件是并联的超薄超导纳米线和并联电阻的组合。建立了一个基于纳米线的开关效应和磁通量量化效应的简单模型来描述器件的行为。仿真并讨论了电流-电压特性和磁通-电压转换曲线,以验证可行性。推导了分流电阻器和电感器的适当参数以制造器件。
更新日期:2020-09-02
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