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Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region
ACS Photonics ( IF 7 ) Pub Date : 2020-09-01 , DOI: 10.1021/acsphotonics.0c00708
Anas Elbaz 1, 2 , Riazul Arefin 1 , Emilie Sakat 1 , Binbin Wang 1 , Etienne Herth 1 , Gilles Patriarche 1 , Antonino Foti 3 , Razvigor Ossikovski 3 , Sebastien Sauvage 1 , Xavier Checoury 1 , Konstantinos Pantzas 1 , Isabelle Sagnes 1 , Jérémie Chrétien 4 , Lara Casiez 5 , Mathieu Bertrand 5 , Vincent Calvo 4 , Nicolas Pauc 4 , Alexei Chelnokov 5 , Philippe Boucaud 6 , Frederic Boeuf 2 , Vincent Reboud 5 , Jean-Michel Hartmann 5 , Moustafa El Kurdi 1
Affiliation  

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work, we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7% to 10.5%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4–8 μm range. We evidence a direct band gap in GeSn with 7% of Sn and lasing at 2–2.3 μm wavelength under optical injection with reproducible lasing thresholds around 10 kW cm–2, lower by 1 order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.

中文翻译:

通过光学有源区域的缺陷管理,降低了GeSn微盘腔中的激光阈值

如今,GeSn合金被视为以完全互补的金属氧化物半导体兼容方法在硅(Si)上构建IV组激光源的最有前途的材料。GeSn激光器的最新发展依赖于通过增加在Si上的锗(Ge)虚拟衬底(VS)上生长的厚GeSn层中的Sn含量来提高能带结构的方向性。然而,这些激光器缺乏缺陷管理和高阈值密度。在这项工作中,我们研究了Sn含量为7%至10.5%的GeSn合金的激光特性。将GeSn层图案化成悬浮的微盘腔,其直径在4–8μm范围内。我们证明,在光学注入下,GeSn具有7%的Sn和在2–2.3μm波长处发射激光的直接带隙,可再现的发射阈值约为10 kW cm–2,与文献资料相比降低了一个数量级。这些结果是在去除GeSn微型磁盘腔的活动区域中错配位错的密集阵列后获得的。研究结果为基于GeSn的激光源的未来设计提供了新的视角。
更新日期:2020-10-21
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