Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (g_m) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency g_m/I_D = 100 V^–1, and it shows that different source materials are preferred for various applications.

中文翻译：

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InAs / InGaAsSb / GaSb应用特定垂直纳米线隧道FET的源材料调整

隧道场效应晶体管（TFET）是有前途的候选者，它们已经证明了3nm技术节点及其以后的潜力。TFET的一项主要挑战是在实现陡峭开关的同时优化高驱动电流的异质结。到目前为止，这种优化主要是从理论上解决的。在这里，我们实验研究源段组成对垂直纳米线InAs / InGaAsSb / GaSb TFET的性能的影响。使用透射电子显微镜进行成分分析与模拟相结合，以解释电特性数据的结果。结果表明，亚阈值摆动（S）和超导（g _m）随着砷组成的增加而降低，直到由于晶格失配引起的应变使两者都增加为止。还检查了铟浓度在结处的作用。这种系统的优化使T-40的工作电压低于40 mV / dec，具有创纪录的跨导效率g _m / I _D = 100 V ^–1，这表明不同的源材料是各种应用的首选。