当前位置:
X-MOL 学术
›
Int. J. Electron.
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Design and simulation of 3C-SiC vertical power MOSFETs
International Journal of Electronics ( IF 1.3 ) Pub Date : 2020-09-13 , DOI: 10.1080/00207217.2020.1818843 H. Fardi 1 , B. Van Zeghbroeck 2
International Journal of Electronics ( IF 1.3 ) Pub Date : 2020-09-13 , DOI: 10.1080/00207217.2020.1818843 H. Fardi 1 , B. Van Zeghbroeck 2
Affiliation
This paper reports on the design and simulation of 3C-SiC low-doped drain power MOSFETs, including key parameters such as the avalanche impact ionisation model and its relation to the breakdown vol...
中文翻译:
3C-SiC垂直功率MOSFET的设计与仿真
本文报告了 3C-SiC 低掺杂漏极功率 MOSFET 的设计和仿真,包括关键参数,例如雪崩撞击电离模型及其与击穿体积的关系。
更新日期:2020-09-13
中文翻译:
3C-SiC垂直功率MOSFET的设计与仿真
本文报告了 3C-SiC 低掺杂漏极功率 MOSFET 的设计和仿真,包括关键参数,例如雪崩撞击电离模型及其与击穿体积的关系。