ABSTRACT In this work, we used a new strategy, based on the reduction of self-compensation, to synthesize p-type ZnO thin films. This new protocol is based on the control of intrinsic defects especially the vacancies and the interstitials of both zinc and oxygen networks. It consists of using zinc nitrate as a precursor and varying its concentration on the one hand, and the addition of acetic acid on the other. Hall Effect measurements have shown a decrease in electron concentration as the nitrate concentration increases. A concrete transition in the conductivity of ZnO from n-type to p-type has been observed for concentration around 0,4M. Thermal Analyses (DTA-TGA), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry were used to study the structural, morphological and optical properties of the synthesized layers. All these measures confirm the appearance of a change in behavior when nitrate concentration is approaching 0,4M. This transition in conductivity-type in ZnO layers has been linked to a significant increase in the oxygen content as confirmed by an EDX analysis during films growth. The growth of p-type ZnO films based on zinc nitrate can potentially lead to the development of new transparent devices applicable in optoelectronics and photovoltaic fields.

中文翻译：

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自补偿还原作为 p 型 ZnO 合成的第一步

摘要在这项工作中，我们使用了一种基于减少自补偿的新策略来合成 p 型 ZnO 薄膜。这种新协议基于对固有缺陷的控制，尤其是锌和氧网络的空位和间隙。它包括使用硝酸锌作为前体并一方面改变其浓度，另一方面加入乙酸。霍尔效应测量表明，随着硝酸盐浓度的增加，电子浓度会降低。在 0.4M 左右的浓度下观察到 ZnO 的电导率从 n 型到 p 型的具体转变。热分析 (DTA-TGA)、X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、紫外可见分光光度法用于研究结构，合成层的形态和光学特性。当硝酸盐浓度接近 0.4M 时，所有这些措施都证实了行为发生变化。薄膜生长过程中的 EDX 分析证实，ZnO 层中导电类型的这种转变与氧含量的显着增加有关。基于硝酸锌的 p 型 ZnO 薄膜的生长可能会导致适用于光电子和光伏领域的新型透明器件的开发。