Abstract We present the phonon-limited electron mobility in planar T graphene and find that the mobility ∝ T − 5 . 53 at low temperature T. With the increase of temperature, the power exponent 5.53 decreases towards 1. Excitingly, the room-temperature mobility of planar T graphene is 2 . 78 × 1 0 6 cm 2 /Vs which is about 20.59 times as large as that of n -type graphene at the same carrier density. Different from graphene with longitudinal acoustic phonon dominating the mobility, an in-plane optical phonon mode contributes the most to the mobility of planar T graphene.

中文翻译：

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平面 T 石墨烯中声子限制迁移率的第一性原理计算

摘要 我们提出了平面 T 石墨烯中声子限制的电子迁移率，并发现迁移率 ∝ T − 5 。53 在低温 T 下。随着温度的升高，功率指数 5.53 向 1 减小。令人兴奋的是，平面 T 石墨烯的室温迁移率为 2 。78 × 1 0 6 cm 2 /Vs 在相同载流子密度下约为 n 型石墨烯的 20.59 倍。与具有纵向声子主导迁移率的石墨烯不同，面内光学声子模式对平面 T 石墨烯的迁移率贡献最大。