Targeting on the selenium free, pure sulfide kesterite compound (CZTS) allows retention of the higher band gap nontoxic absorber for a single-junction solar cell. In this work, CZTS thin films were deposited by the PLD method and the Structural/optical properties, as well as Mott–Schottky analysis, were studied at different substrate temperatures. Without undergoing the sulfurization process, the single-phase CZTS thin film is prepared at 300 ℃. In the second step, a numerical simulation is performed using the solar cell capacitance simulator to study the effect of the grading layer of MoS(Se)₂ on the rear side of pure sulfide kesterite based solar cells. The device with a MoSe₂ coated substrate exhibits better performance in comparison with the soda-lime-glass (SLG)/Mo that is susceptible to the formation of an n-type MoS₂ intermediate layer. An improvement in conversion efficiency from 5.4% to 13.99%, often due to an increase of open-circuit voltage has been reached.

瞄准不含硒的纯硫化物钾钛矿化合物（CZTS），可以保留用于单结太阳能电池的较高带隙无毒吸收剂。在这项工作中，通过PLD方法沉积了CZTS薄膜，并研究了在不同基板温度下的结构/光学特性以及Mott-Schottky分析。在不进行硫化的情况下，在300℃下制备了单相CZTS薄膜。在第二步中，使用太阳能电池电容模拟器执行数值模拟，以研究MoS（Se）₂分级层对基于纯硫化物Kesterite的太阳能电池背面的影响。具有MoSe ₂的设备与易于形成n型MoS ₂中间层的钠钙玻​​璃（SLG）/ Mo相比，涂覆的基材表现出更好的性能。通常由于开路电压的增加，转换效率从5.4％提高到13.99％。