Abstract

The transmission and reflection spectra of a CdSiP₂ single crystal are measured in the temperature interval from 80 to 300 K using the terahertz (THz) pulsed and infrared Fourier spectroscopy methods. A significant influence of postgrowth defects on the absorption in the THz frequency range is revealed. This absorption is found to depend weakly on temperature compared to that observed previously for other chalcopyrite crystal with substantially lower concentration of defects. Upon cooling, intrinsic absorption mechanisms are minimized, and the contribution of defects to absorption is separated.

中文翻译：

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缺陷对CdSiP 2单晶中太赫兹辐射吸收的影响

摘要

使用太赫兹（THz）脉冲和红外傅里叶光谱法在80至300 K的温度区间内测量了CdSiP ₂单晶的透射光谱和反射光谱。揭示了生长后缺陷对太赫兹频率范围内吸收的重大影响。与先前观察到的其他具有缺陷浓度低得多的黄铜矿晶体相比，发现该吸收对温度的依赖性很小。冷却时，固有的吸收机理被最小化，并且缺陷对吸收的贡献被分离。