Abstract Silicon carbide quantum dots (SiC-QD) embedded inside the SiC thin film deposited on silicon (111) wafer is directly synthesized by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane as a precursor. Subsequent microscopic characterization of the thin film exhibits the presence of QD, which is theoretically corroborated from the exciton Bohr radius. The film shows interesting visible and near-infra-red photoluminescence at room temperature with enhanced lifetime. In addition to the lifetime, the quantum efficiency in the visible emission was also enhanced substantially than what was reported previously. Graphic abstract

中文翻译：

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硼掺杂 SiC 薄膜光学性能的增强：SiC QD 效应

摘要 碳化硅量子点 (SiC-QD) 嵌入在沉积在硅 (111) 晶片上的 SiC 薄膜中，是使用掺硼液态聚碳硅烷作为前驱体，通过改良的化学气相沉积技术直接合成的。薄膜的后续微观表征展示了 QD 的存在，这在理论上从激子玻尔半径得到了证实。该薄膜在室温下显示出有趣的可见光和近红外光致发光，寿命更长。除了寿命外，可见光发射中的量子效率也比之前报道的显着提高。图形摘要