Abstract

The nanoindentation method was used to study the elastic properties of gallium nitride and aluminum nitride films grown on nanoscale silicon carbide on silicon (SiC/Si), a new type of substrate. The values of the Young’s modulus of epitaxial films of such wide-gap semiconductors as GaN and AlN, grown on substrates SiC/Si. were determined for the first time. It was experimentally established using the nanoindentation method that the Young’s modulus of the GaN epitaxial layer on SiC/Si is 265 GPa, and that of the AlN film is 223 GPa. Using atomic force microscopy and spectral ellipsometry, the structural characteristics of gallium nitride and aluminum nitride films have been studied. The thicknesses of the films and the roughness of their surface are determined.

中文翻译：

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SiC / Si杂化衬底上形成的GaN和AlN薄膜的弹性特性，多孔基础

摘要

纳米压痕法用于研究在新型衬底硅（SiC / Si）上的纳米尺度碳化硅上生长的氮化镓和氮化铝膜的弹性。在衬底SiC / Si上生长的GaN和AlN等宽禁带半导体的外延膜的杨氏模量值。是第一次确定。使用纳米压痕法实验确定，SiC / Si上的GaN外延层的杨氏模量为265 GPa，AlN膜的杨氏模量为223 GPa。利用原子力显微镜和光谱椭圆仪，研究了氮化镓和氮化铝膜的结构特征。确定膜的厚度及其表面的粗糙度。