This paper is devoted to the effect of gamma radiation on commercial IRFP250 N-channel metal oxide semiconductor field effect transistors (MOSFETs) in a dose range from 0.5 Gy up to 50 Gy. The device under investigation can be utilized for radiation therapy and dose detection and measurement. The different MOSFETs parameters such as drain current I_D, threshold voltage V_th, sensitivity S, transconductance G, and annealing are studied. The main goal of this work is to accurately determine the previous parameters before and after ionizing radiation. From the obtained results, one can estimate the dosage by measuring the mentioned device parameters. The study will be of benefit not only for MOSFET applications as a dosimeter, but also for selecting the type which can tolerate this kind of radiation, especially for space and satellite applications. Finally, the annealing process is done at different temperatures and time. This will aid in determining the ability of the device under test (DUT) to recover. Therefore, the fading of the DUT is studied. From our results, the MOSFET device has excellent properties as a dosimeter. Moreover, in our case, the transconductance and sensitivity were enhanced after irradiation.

本文专门介绍了伽玛辐射对商用IRFP250 N通道金属氧化物半导体场效应晶体管（MOSFET）的影响，剂量范围为0.5 Gy至50 Gy。被调查的设备可用于放射治疗以及剂量检测和测量。MOSFET的不同参数，例如漏极电流I _D，阈值电压V _th，灵敏度S，跨导G研究了退火。这项工作的主要目的是在电离辐射之前和之后准确确定先前的参数。根据获得的结果，可以通过测量所述装置参数来估计剂量。该研究不仅对于作为剂量计的MOSFET应用是有益的，而且对于选择能够耐受这种辐射的类型也将是有益的，特别是对于太空和卫星应用。最后，退火过程在不同的温度和时间进行。这将有助于确定被测设备（DUT）的恢复能力。因此，研究了DUT的衰落。根据我们的结果，MOSFET器件具有出色的剂量计性能。而且，在我们的情况下，辐照后跨导和灵敏度提高了。