Different compositions of as-obtained As₄₀S_60-xSe_x thin films (x = 0 at.%, 20 at.%, 40 at.%, and 60 at.%) with fixed thicknesses were deposited by a thermal evaporation technique. Inheterogeneities of thin-film thickness is a problem that includes significant errors of optical calculations unless there is an optical model that prevents these errors, and the consequent gross errors, in the measurement of optical constants. If not taken into account, this may lead to rather large calculated values for the absorption coefficient or the incorrect presence of the absorption-band tail, as well as to significant errors in the calculated values of the refractive index and film thickness. The optical properties of As₄₀S_60-xSe_x thin films have been determined utilizing measurements of the optical transmission spectra. Owing to the shrinking of the transmission spectra in both the medium and strong absorption regions, we have resorted to applying the optical wedge model for the determination of the film thickness with high precision that equals approximately 725 nm. This paper therefore presents formulae for the transmittance spectrum of a thin dielectric film of selected thickness covering a thick, non-absorbing substrate as well as its upper and lower envelopes. The effect of the content variation on the interference fringes of the transmittance spectrum is analyzed in detail. The electrical properties of the As₄₀S_60-xSe_x thin films have been studied in terms of measuring the temperature-dependent AC conductivity. Both the dielectric constants and dielectric modulus were investigated and are discussed for applications in optoelectronic devices. The change in electrical properties of As₄₀S_60-xSe_x thin films has been interpreted in terms of changed morphological and structural properties. The ratios of the elements were analyzed by comparing them with the actual weight ratios of the bulk material using EDX technology, in addition to the assessment of the Amorphic structure and composition characteristics of the films examined by the x-ray and scanning electron microscopy.

通过热蒸发技术沉积不同厚度的具有固定厚度的As ₄₀ S _{60- x} Se _x薄膜（x  = 0 at。％，20 at。％，40 at。％和60 at。％）的组成。薄膜厚度的不均匀性是一个包括光学计算的重大误差的问题，除非在光学常数的测量中存在防止这些误差的光学模型以及随之而来的总误差。如果不加以考虑，这可能导致吸收系数的计算值过大或吸收带尾部的不正确存在，以及折射率和膜厚度的计算值中的显着误差。砷的光学性质₄₀ S _{60- x} Se _x薄膜已经利用光学透射光谱的测量方法确定。由于在中吸收区和强吸收区中透射光谱的缩小，我们已采用光学楔模型来确定膜厚度，其精确度约为725 nm。因此，本文为覆盖厚的非吸收性基材及其上下包膜的选定厚度的薄介电薄膜的透射光谱提供了公式。详细分析了含量变化对透射光谱的干涉条纹的影响。As ₄₀ S _{60- x}的电性能硒_X薄膜已经在测量与温度有关的AC导电性方面进行了研究。研究了介电常数和介电模量，并讨论了它们在光电器件中的应用。As ₄₀ S _{60- x} Se _x薄膜的电性能变化已根据形态和结构特性的变化进行了解释。通过使用EDX技术将元素的比例与散装材料的实际重量比例进行比较，分析了元素的比例，此外还通过X射线和扫描电子显微镜对膜的非晶结构和组成特征进行了评估。