Black phosphorous (BP), an excellent two-dimensional (2D) monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure, has been widely applied in various devices. As the essential building blocks for modern electronic and optoelectronic devices, high quality PN junctions based on semiconductors have attracted widespread attention. Herein, we report a junction field-effect transistor (JFET) by integrating narrow-gap p-type BP and ultra-wide gap n-type β-Ga2O3 nanoflakes for the first time. BP and β-Ga2O3 form a vertical van der Waals (vdW) heterostructure by mechanically exfoliated method. The BP/β-Ga2O3 vdW heterostructure exhibits remarkable PN diode rectifying characteristics with a high rectifying ratio about 107 and a low reverse current around pA. More interestingly, by using the BP as the gate and β-Ga2O3 as the channel, the BP/β-Ga2O3 JFET devices demonstrate excellent n-channel JFET characteristics with the on/off ratio as high as 107, gate leakage current around as low as pA, maximum transconductance (gm) up to 25.3 µS and saturation drain current (IDSS) of 16.5 µA/µm. Moreover, it has a pinch-off voltage of –20 V and a minimum subthreshold swing of 260 mV/dec. These excellent n-channel JFET characteristics will expand the application of BP in future nanoelectronic devices.

中文翻译：

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基于黑磷/β-Ga2O3异质结的高性能结型场效应晶体管

黑磷 (BP) 是一种优异的二维 (2D) 单元素层状 p 型半导体材料，具有高载流子迁移率和厚度相关的可调直接带隙结构，已广泛应用于各种器件中。作为现代电子和光电器件的基本组成部分，基于半导体的高质量 PN 结引起了广泛关注。在此，我们首次报告了一种通过集成窄间隙 p 型 BP 和超宽间隙 n 型 β-Ga2O3 纳米薄片的结型场效应晶体管（JFET）。BP 和 β-Ga2O3 通过机械剥离方法形成垂直范德华 (vdW) 异质结构。BP/β-Ga2O3 vdW 异质结构表现出显着的 PN 二极管整流特性，具有大约 107 的高整流比和大约 pA 的低反向电流。更有趣的是，以BP为栅极，β-Ga2O3为沟道，BP/β-Ga2O3 JFET器件表现出优异的n沟道JFET特性，开/关比高达107，栅极漏电流低至pA左右，最大跨导 (gm) 高达 25.3 µS，饱和漏极电流 (IDSS) 为 16.5 µA/µm。此外，它的夹断电压为 –20 V，最小亚阈值摆幅为 260 mV/dec。这些优异的n沟道JFET特性将扩大BP在未来纳米电子器件中的应用。它的夹断电压为 –20 V，最小亚阈值摆幅为 260 mV/dec。这些优异的n沟道JFET特性将扩大BP在未来纳米电子器件中的应用。它的夹断电压为 –20 V，最小亚阈值摆幅为 260 mV/dec。这些优异的n沟道JFET特性将扩大BP在未来纳米电子器件中的应用。