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Spectroscopic correlation of chalcogen defects in atomically thin MoS 2(1− x ) Se 2 x alloys
Journal of Physics: Materials ( IF 5.847 ) Pub Date : 2020-08-24 , DOI: 10.1088/2515-7639/abab6a Rahul Sharma 1 , Juhi Pandey 2 , Krishna Rani Sahoo 1 , Kewal Singh Rana 2 , Ravi K Biroju 1 , Wolfgang Theis 3 , Ajay Soni 2 , Tharangattu N Narayanan 1
Journal of Physics: Materials ( IF 5.847 ) Pub Date : 2020-08-24 , DOI: 10.1088/2515-7639/abab6a Rahul Sharma 1 , Juhi Pandey 2 , Krishna Rani Sahoo 1 , Kewal Singh Rana 2 , Ravi K Biroju 1 , Wolfgang Theis 3 , Ajay Soni 2 , Tharangattu N Narayanan 1
Affiliation
Engineering of atomically thin transition metal dichalcogenides (TMDs) is highly sought after for novel optoelectronic and spintronic devices. With the limited number of naturally existing TMDs, chalcogen based alloying has become a viable solution for developing TMDs for optical modulators and photovoltaics. Here, we report on detailed optical and microscopic studies of ternary TMD alloys of molybdenum, sulfur, and selenium grown via a single step method. The developed material has tunable band gaps in a broad range 1.5–1.9 eV with the variation in sulfur compositions. Further, the existence of trions, bi-excitons, and defect bound excitons are shown using temperature dependent (4 K−300 K) photoluminescence spectroscopy. A detailed analysis on MoS 1.34 Se 0.66 alloy system shows the evidence of new types of defect bound excitons originating at low temperatures along with the presence of bi-excitons having a binding energy of ∼41 meV. The prospects of defect i...
中文翻译:
原子级薄MoS 2(1- x)Se 2 x合金中硫族元素缺陷的光谱相关性
对于新颖的光电和自旋电子器件,原子薄的过渡金属二卤化物(TMD)的工程设计倍受追捧。由于天然存在的TMD数量有限,硫属元素基合金化已成为开发用于光学调制器和光伏产品的TMD的可行解决方案。在这里,我们报告了通过一步法生长的钼,硫和硒三元TMD合金的详细光学和显微研究。随着硫成分的变化,开发的材料在1.5-1.9 eV的宽范围内具有可调的带隙。此外,使用温度依赖性(4 K-300 K)光致发光光谱法显示了ons,双激子和缺陷键合激子的存在。MoS 1.34 Se 0的详细分析。66合金系统显示出新型的缺陷结合型激子起源于低温以及结合能为〜41 meV的双激子。缺陷的前景
更新日期:2020-08-31
中文翻译:
原子级薄MoS 2(1- x)Se 2 x合金中硫族元素缺陷的光谱相关性
对于新颖的光电和自旋电子器件,原子薄的过渡金属二卤化物(TMD)的工程设计倍受追捧。由于天然存在的TMD数量有限,硫属元素基合金化已成为开发用于光学调制器和光伏产品的TMD的可行解决方案。在这里,我们报告了通过一步法生长的钼,硫和硒三元TMD合金的详细光学和显微研究。随着硫成分的变化,开发的材料在1.5-1.9 eV的宽范围内具有可调的带隙。此外,使用温度依赖性(4 K-300 K)光致发光光谱法显示了ons,双激子和缺陷键合激子的存在。MoS 1.34 Se 0的详细分析。66合金系统显示出新型的缺陷结合型激子起源于低温以及结合能为〜41 meV的双激子。缺陷的前景