Zinc tin nitride (ZnSnN 2 ) is one of the emerging ternary nitride semiconductors considered for photovoltaic device applications due to its attractive and tunable material properties and earth abundance of constituent elements. Computational predictions of the material properties sparked experimental synthesis efforts, and currently there are a number of groups involved in ZnSnN 2 research. In this article, we review the progress of research and development efforts in ZnSnN 2 across the globe, and provide several highlights of accomplishments at the National Renewable Energy Laboratory (NREL). The interplay between computational predictions and experimental observations is discussed and exemplified by focusing on unintentional oxygen incorporation and the resulting changes in optical and electronic properties. The research progress over the past decade is summarized, and important future development directions are highlighted.

中文翻译：

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ZnSnN 2半导体材料综述

氮化锌锡（ZnSnN 2）是一种新兴的三元氮化物半导体，因其具有吸引力和可调节的材料特性以及构成元素的土壤丰度而被考虑用于光伏器件。材料性能的计算预测引发了实验合成的努力，目前ZnSnN 2研究涉及许多小组。在本文中，我们回顾了全球ZnSnN 2研发工作的进展，并提供了国家可再生能源实验室（NREL）取得的一些成就。讨论和举例说明了计算预测和实验观察之间的相互影响，并重点研究了无意识的氧掺入以及由此产生的光学和电子性质变化。