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Hartree theory calculations of quasiparticle properties in twisted bilayer graphene
Electronic Structure Pub Date : 2020-08-04 , DOI: 10.1088/2516-1075/ab9f94
Zachary A H Goodwin , Valerio Vitale , Xia Liang , Arash A Mostofi , Johannes Lischner

A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping—an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.



中文翻译:

扭曲双层石墨烯中准粒子特性的 Hartree 理论计算

需要详细了解魔角附近的扭曲双层石墨烯 (tBLG) 中的相互作用电子,以深入了解观察到的对称破缺相的物理起源。在这里,我们提出了作为掺杂和扭曲角函数的 tBLG 在(半)金属相中的电子特性的广泛原子 Hartree 理论计算。具体来说,我们计算准粒子特性,例如能带结构、状态密度 (DOS) 和局部状态密度 (LDOS),这些特性可在光发射和隧穿光谱实验中直接获得。我们发现准粒子特性在掺杂后会发生显着变化——这种效应没有被紧束缚理论捕捉到。特别是,我们观察到部分占据的能带显着变平,这增强了费米能级的状态密度。我们预测在 tBLG 的 AB/BA 区域的 LDOS 中这种带变平的明显特征可以在扫描隧道实验中进行测试。我们还研究了准粒子特性对 tBLG 介电环境的依赖性,并发现这些特性由于强大的内部筛选而令人惊讶地稳健。最后,我们提出了 Hartree 势的简单解析表达式,它可以在不需要自洽计算的情况下确定准粒子特性。我们还研究了准粒子特性对 tBLG 介电环境的依赖性,并发现这些特性由于强大的内部筛选而令人惊讶地稳健。最后,我们提出了 Hartree 势的简单解析表达式,它可以在不需要自洽计算的情况下确定准粒子特性。我们还研究了准粒子特性对 tBLG 介电环境的依赖性,并发现这些特性由于强大的内部筛选而令人惊讶地稳健。最后,我们提出了 Hartree 势的简单解析表达式,它可以在不需要自洽计算的情况下确定准粒子特性。

更新日期:2020-08-04
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