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Influence of electron cyclotron resonance ion source parameters on high energy electrons
Review of Scientific Instruments ( IF 1.6 ) Pub Date : 2020-08-01 , DOI: 10.1063/5.0011403
J B Li 1 , L X Li 1 , L B Li 1 , J W Guo 1 , D Hitz 1 , W Lu 1 , Y C Feng 1 , W H Zhang 1 , X Z Zhang 1 , H Y Zhao 1 , L T Sun 1 , H W Zhao 1
Affiliation  

In order to diagnose the electron cyclotron resonance (ECR) plasma, a high-efficiency collimation system has been developed at the Institute of Modern Physics, and the bremsstrahlung spectra in the range of 10 keV-300 keV were measured on a third generation superconducting ECR ion source, SECRAL-II, with a CdTe detector. Used as a comparative index of the mean energy of the high energy electron population, the spectral temperature, Ts, is derived through a linear fitting of the spectra in a semi-logarithmic representation. The influences of some main source parameters, such as the neutral gas pressure, extraction voltage, microwave power, and bias disk voltage, on the high energy electrons are systemically investigated.

中文翻译:

电子回旋共振离子源参数对高能电子的影响

为了诊断电子回旋共振(ECR)等离子体,近代物理研究所开发了一种高效准直系统,在第三代超导ECR上测量了10 keV-300 keV范围内的轫致辐射谱SECRAL-II 离子源,带有 CdTe 检测器。作为高能电子群平均能量的比较指标,光谱温度 Ts 是通过光谱的线性拟合以半对数表示形式导出的。系统地研究了一些主要的源参数,如中性气体压力、提取电压、微波功率和偏置盘电压对高能电子的影响。
更新日期:2020-08-01
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