Abstract Zinc sulphide-polyvinyl alcohol (ZnS-PVA) nanocomposite thin films were synthesized on glass substrates via solvent casting method followed by thermolysis technique. The thermolysis reactions were carried out at different thermolysis temperatures (Tt) ∼80, 100, 120, 150, 200 and 250 °C to study the induced changes in the growth process. Thin films synthesized at Tt ∼ 200 and 250 °C consist of ZnS nanoparticles with high crystallinity and distinct lattice fringes were observed by high-resolution transmission electron microscope. At Tt ∼ 250 °C the PVA contents in the film diminishes given that agglomeration of crystallites takes place. X-ray diffraction and selected area electron diffraction patterns confirm the cubic phase of the ZnS-PVA thin films with preferred orientation along (111). The scanning electron micrographs reveal the homogeneous morphology and increase in grain size on the surface of thin films at higher thermolysis temperature. The thickness of the films determined using Swanepoel's method was found to decrease from 1700 to 350 nm when thermolysis temperature increases. The presence of different functional groups and the formation of bonds between Zn and S were confirmed by fourier transform infra-red spectrum analysis. The metal-semiconductor junction was synthesized by forming an indium tin oxide/ZnS-PVA/Al heterostructure. The behavior of metal-semiconductor junction was analyzed by current- voltage characteristics.

中文翻译：

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热解温度对纳米复合硫化锌聚乙烯醇薄膜形貌、结构和光学性能的影响：氧化铟锡/硫化锌聚乙烯醇/铝肖特基二极管的制备和表征

摘要 采用溶剂浇铸法和热解法在玻璃基板上合成了硫化锌-聚乙烯醇（ZnS-PVA）纳米复合薄膜。在不同的热解温度（Tt）~80、100、120、150、200和250℃下进行热解反应以研究生长过程中的诱导变化。通过高分辨率透射电子显微镜观察到在 Tt ~ 200 和 250 °C 合成的薄膜由具有高结晶度和明显晶格条纹的 ZnS 纳米颗粒组成。在 Tt ～ 250 °C 时，由于微晶发生聚集，薄膜中的 PVA 含量会减少。X 射线衍射和选区电子衍射图证实了 ZnS-PVA 薄膜的立方相沿（111）具有择优取向。扫描电子显微照片揭示了在较高热解温度下薄膜表面的均匀形态和晶粒尺寸增加。发现当热解温度升高时，使用 Swanepoel 方法测定的薄膜厚度从 1700 nm 减少到 350 nm。通过傅立叶变换红外光谱分析证实了不同官能团的存在以及Zn和S之间键的形成。通过形成氧化铟锡/ZnS-PVA/Al异质结构来合成金属-半导体结。通过电流-电压特性分析金属-半导体结的行为。发现当热解温度升高时，s 方法从 1700 nm 减小到 350 nm。通过傅立叶变换红外光谱分析证实了不同官能团的存在以及Zn和S之间键的形成。通过形成氧化铟锡/ZnS-PVA/Al异质结构来合成金属-半导体结。通过电流-电压特性分析金属-半导体结的行为。发现当热解温度升高时，s 方法从 1700 nm 减小到 350 nm。通过傅立叶变换红外光谱分析证实了不同官能团的存在以及Zn和S之间键的形成。通过形成氧化铟锡/ZnS-PVA/Al异质结构来合成金属-半导体结。通过电流-电压特性分析金属-半导体结的行为。