Abstract III-nitride was grown by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) with a very high-frequency electric source 100 MHz, using nitrogen and hydrogen as a source gas free from ammonia gas. Applying radio frequency (RF) power at the top electrode generates activated nitrogen, hydrogen, and other nitrogen species. Homoepitaxial gallium nitride (GaN) growth was studied as a function of chamber pressure by REMOCVD. The grown GaN was characterized by scanning electron microscope (SEM), atomic force microscope (AFM), and double crystal X-ray diffraction (XRD). Ga radicals and N radicals were detected by optical emission spectroscopy (OES) as a function of chamber pressure. The V/III ratio changes with the N2*/Ga* ratio, and the step flow growth of GaN was achieved under the chamber pressure of 300 Pa.

中文翻译：

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腔室压力对自由基增强 MOCVD (REMOCVD) 生长的同质外延 GaN 晶体质量的影响

摘要 III 族氮化物是通过自由基增强金属有机化学气相沉积 (REMOCVD) 和 100 MHz 甚高频电源生长的，使用氮气和氢气作为不含氨气的源气体。在顶部电极处施加射频 (RF) 功率会产生活性氮、氢和其他氮物质。通过 REMOCVD 研究了同质外延氮化镓 (GaN) 生长作为腔室压力的函数。通过扫描电子显微镜（SEM）、原子力显微镜（AFM）和双晶X射线衍射（XRD）对生长的GaN进行表征。Ga 自由基和 N 自由基通过光发射光谱 (OES) 检测为腔室压力的函数。V/III 比值随 N2*/Ga* 比值的变化而变化，在 300 Pa 的腔室压力下实现了 GaN 的阶梯流生长。