Abstract

This paper describes the laboratory samples of high-voltage (1560 V) fast recovery (20 ns) avalanche diodes based on silicon carbide (SiC). It is shown that the fabricated diodes are capable of dissipating energy up to 2.9 J/cm² in the mode of single avalanche current pulses (1-μs pulse duration). The numerical computation of the unsteady heat process shows that self-heating by an avalanche pulse causes the local temperature in the base of the diodes to reach at least 1100 K.

中文翻译：

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碳化硅上的高压快速恢复雪崩二极管

摘要

本文介绍了基于碳化硅（SiC）的高压（1560 V）快速恢复（20 ns）雪崩二极管的实验室样品。结果表明，所制造的二极管能够在单雪崩电流脉冲（1-μs脉冲持续时间）的模式下耗散高达2.9 J / cm ^2的能量。非稳态热过程的数值计算表明，雪崩脉冲引起的自热导致二极管基极的局部温度至少达到1100K。