The introduction of nano-sized BaTiO₃ (BT) into polymer host matrices brings about promising dielectric and energy storage properties. However, pristine BT tends to aggregate and is difficult to be compatible with polymer matrices, thus requiring surface modification of BT nanoparticles. In this work, γ-aminopropyl triethoxysilane (KH550) was grafted onto the surface of BT as a shell and amino-functionalized core-shell KH550@BT nanoparticles have been successfully prepared. Thereafter, poly(arylene ether nitrile) (PEN) has been chosen as polymer matrix due to its excellent thermal properties, and xKH550@BT/(1-x)PEN composite films were prepared by solution casting film formation method. The energy density of KH550@BT/PEN composites with 30 wt.% filler loading is 1.30 J cm⁻³ (η = 61.32 %) at 150 MV m⁻¹, more than 36.84 % increase when compared with pristine PEN polymer (0.95 J cm⁻³ at 170 MV m⁻¹). Temperature-dependent and frequency-dependent D–E loops confirmed that KH550@BT/PEN composites possess good temperature and frequency stability.

将纳米级BaTiO ₃（BT）引入聚合物基质中带来了有希望的介电和储能性能。然而，原始的BT倾向于聚集并且难以与聚合物基质相容，因此需要对BT纳米颗粒进行表面改性。在这项工作中，将γ-氨基丙基三乙氧基硅烷（KH550）接枝到BT的表面作为壳，并成功制备了氨基官能化的核壳KH550 @ BT纳米颗粒。此后，由于其优良的热性能，聚（亚芳基醚腈）（PEN）被选作聚合物基体，x KH550 @ BT /（1- x通过溶液流延成膜法制备PEN复合膜。填料含量为30 wt。％的KH550 @ BT / PEN复合材料在150 MV m ^-1下的能量密度为1.30 J cm ^-3（η= 61.32％），与原始PEN聚合物（0.95 J）相比，增加了36.84％。在170 MV m ^-1时为cm ^-3）。温度相关和频率相关的D–E回路证实，KH550 @ BT / PEN复合材料具有良好的温度和频率稳定性。