Improving device deformability under mechanical stress is an essential requirement for the realization of next-generation wearable electronic applications. Herein, we report a new concept of stretchable thin-film transistors (TFTs) that can be fabricated without substrate components. Instead of using plastic substrates, we employ an elastic (and also free-standing) solid-state electrolyte as a gate insulator. The strategy not only realizes stretchable TFTs, but also enhances the device performance (e.g. mobility, operation voltage) by the formation of high-capacitance electric double layers. As source-drain electrodes, semi-circular shaped gold (Au) thin-film was employed to enhance the device stretchability. By the combination of a solid electrolyte (gate insulator), metal film (electrodes), and polymer semiconductor (channel layer), the device is stretchable up to around 10%, and shows typical p-channel switching performance with low operation voltage of 1 V and TFT mobility of about 0.81 cm²/V s. The devices were processed by a simple solution process and thermal evaporation under low temperature (<60 °C). Therefore, the present work can offer a simple and effective way to fabricate stretchable TFTs and electronic applications, such as complementary circuits and sensors.

提高机械应力下的设备变形能力是实现下一代可穿戴电子应用的基本要求。在此，我们报告了无需衬底组件即可制造的可拉伸薄膜晶体管（TFT）的新概念。代替使用塑料基板，我们使用弹性（也可以独立放置）的固态电解质作为栅极绝缘体。该策略不仅实现了可拉伸的TFT，而且通过形成高电容的双电层提高了器件性能（例如迁移率，工作电压）。作为源漏电极，采用半圆形金（Au）薄膜来增强器件的可拉伸性。通过固体电解质（栅极绝缘体），金属膜（电极）和聚合物半导体（沟道层）的组合，p沟道开关性能具有1 V的低工作电压和约0.81 cm ² / V s的TFT迁移率。通过简单的固溶工艺和低温（<60°C）下的热蒸发来处理器件。因此，本发明可以提供一种简单有效的方法来制造可拉伸TFT和电子应用，例如互补电路和传感器。