Abstract In this paper, we report an InGaZnO thin film transistor with organosilicon passivation layer (PVL) which can effectively improve the reliability and performance of the InGaZnO thin film transistor due to its excellent gas barrier property and the hydrogen doping effect of PVL. The TFT with organosilicon PVL exhibits a boosted performance with mobility of 17.78 cm2/v·s, threshold voltage of 2.78 V, subthreshold swing of 0.41 V/decade and Ion/Ioff of 1.37 × 107. Moreover, the proposed PVL for InGaZnO thin film transistor shows a small threshold shift of 0.89 V and −1.14 V for positive bias stress and negative bias stress condition, respectively.

中文翻译：

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具有有机硅钝化层的 InGaZnO 薄膜晶体管的可靠性和性能改进

摘要 在本文中，我们报道了一种具有有机硅钝化层 (PVL) 的 InGaZnO 薄膜晶体管，由于其优异的气体阻隔性和 PVL 的氢掺杂效应，可以有效提高 InGaZnO 薄膜晶体管的可靠性和性能。具有有机硅 PVL 的 TFT 表现出更高的性能，迁移率为 17.78 cm2/v·s，阈值电压为 2.78 V，亚阈值摆幅为 0.41 V/decade，Ion/Ioff 为 1.37 × 107。此外，提议的用于 InGaZnO 薄膜的 PVL对于正偏置应力和负偏置应力条件，晶体管分别显示 0.89 V 和 -1.14 V 的小阈值偏移。